PART |
Description |
Maker |
0809LD60 |
60 Watt / 28V / 1 Ghz LDMOS FET 60 WATT 28V 1 GHz LDMOS FET 60 WATT, 28V, 1 GHz LDMOS FET
|
GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
MAPLST1617-030CF MAPLST1617-030CF-15 |
LDMOS RF Line Power FET Transistor LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
|
M/A-COM Technology Solu...
|
1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies UHV240-KH/AS PTSA 0.5/ 9-2.5-Z Discrete POWER & Signal Technologies 分立功率 1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器(功500瓦的瞬变电压抑制器) 1500 Watt Transient Voltage Suppressors(???500???????靛?????? Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp. http://
|
TGF2023-05 |
25 Watt Discrete Power GaNon SiCHEMT
|
TriQuint Semiconductor
|
NE5550779A NE5550779A-T1 NE5550779A-A |
Silicon Power LDMOS FET
|
California Eastern Labs
|
NE5550979A-T1A-A NE5550979A-A NE5550979A13 NE55509 |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS SILICON POWER MOS FET
|
California Eastern Labs
|
TGF2023-01-15 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
MRF9745T1 |
HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
|
Motorola, Inc
|
PXAC182908FV PXAC182908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|